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Semiconductor materials technology company Beijing Tongmei completed the update of financial information and continued to promote the IPO of the Science and Technology Innovation Board

According to news on July 8, Beijing Tongmei has recently completed the update of its financial information and continues to promote the listing process on the Science and Technology Innovation Board.


Information shows that Beijing Tongmei is a world-renowned semiconductor materials technology company, mainly engaged in the research and development, production and sales of indium phosphide substrates, gallium arsenide substrates, germanium substrates, PBN materials and other high-purity materials. Products can be used in the production of radio frequency devices, optical modules, LEDs (Mini LED and Micro LED), lasers, detectors, sensors, space solar cells and other fields.

Beijing Tongmei’s existing customers include ams OSRAM, IQE, II-VI, meta, Qorvo, Sanan Optoelectronics, Changguang Huaxin and other domestic and foreign epitaxy manufacturers, chip and device manufacturers.

From 2019 to 2021, Beijing Tongmei achieved operating income of 462.2268 million yuan, 583.1704 million yuan and 857.3452 million yuan respectively; net profits during the same period were -28.0635 million yuan, 60.2742 million yuan and 94.0345 million yuan respectively.

In January 2022, the IPO of Beijing Tongmei Science and Technology Innovation Board was accepted. The company plans to raise 1.167 billion yuan to invest in gallium arsenide semiconductor material projects, indium phosphide (wafer) semiconductor material projects, and semiconductor material research and development projects.projects and supplement working capital. In July of the same year, the IPO of Beijing Tongmei Science and Technology Innovation Board was approved, and a registration application was submitted to the China Securities Regulatory Commission in August.

Among them, the gallium arsenide semiconductor material project mainly produces 2, 3, 4, 5, 6, and 8-inch gallium arsenide substrates, and will build an annual production capacity of 500,000 8-inch gallium arsenide substrates and an annual output of 4 million gallium arsenide substrates (equivalent to 2 inches), accelerating the layout of Beijing Tongmei's large-size gallium arsenide substrate products in the fields of Mini LED and Micro LED.

Beijing Tongmei’s planned fund-raising content

The indium phosphide (wafer) semiconductor material project mainly produces 2 and 3-inch indium phosphide substrates, which will enable Beijing Tongmei to form an annual production capacity of 810,000 pieces equivalent to 2-inch indium phosphide substrates. The main downstream uses of the project products are optical modules (optical chips, detectors, emitters, etc.) and other devices.
The semiconductor material R&D project will build on the company’s existing R&D environment, purchase some high-performance R&D equipment, and recruit high-quality R&D talents, which will help the company improve its technical strength and accelerate R&D innovation and achievement transformation.
During the project construction period, Beijing Tongmei plans to carry out research and development in the following technical directions, namely the research and development of high-quality 8-inch gallium arsenide polished wafer process, the research and development of gallium arsenide and indium phosphide semiconductor wafer characterization technology, the research and development of high-quality low surface defect indium phosphide wafers, the improvement and upgrading of 6-inch indium phosphide crystal growth process, and the research and development of 8-inch gallium arsenide crystal growth process.

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