Sundiode and Soft-Epi develop all-InGaN stacked RGB Micro LED

Recently, foreign media reported that Sundiode, a developer of stacked RGB Micro LED microdisplays, announced that it has jointly achieved the growth of a monolithic all-InGaN RGB LED structure on a single sapphire wafer with GaN technology developer Soft-Epi.

Information shows that Sundiode is headquartered in California, USA, and is committed to developing Micro LED display technology for AR/MR and other devices. In April 2021, Sundiode announced its proprietary stacked RGB Micro LED pixel technology. Different from the traditional Pick & Place process of separately transferring three R/G/B pixels, Sundiode's proprietary technology only needs to directly bond the stacked RGB Micro LED pixel array on a single wafer to the silicon-based CMOS backplane.
It is understood that Sundiode's epitaxial technology makes it possible to develop multiple junctions (Multiple junctions) stacked RGB LED chips, which can independently emit RGB light colors. This chip structure makes it easier for manufacturers to produce ultra-high-density microdisplays.
Sundiode said that due to the rapid inspection method used in on-wafer testing, the monolithic RGB LED structure can work as a cascade multi-junction LED.Detection of the light emitted confirms the normal operation of the cascaded LEDs.
The partner of this research and development, Soft-Epi, is from South Korea. As a GaN technology developer, it has successfully developed GaN-based red, blue, and green LEDs in 2021. Last year, Soft-Epi developed what it said was South Korea's first red GaN epitaxial wafer, and the product has now been mass-produced and shipped.