Indium Selinide (InSe)
A better semiconductor than graphene
A better semiconductor than graphene
Graphene is only one layer of atoms thick and has unparalleled conductivity. Experts around the world are imagining the use of graphene in future circuits.
Despite all its extraordinary properties, graphene has no energy gap. Unlike ordinary semiconductors, it behaves chemically more like a metal. This makes its prospects for transistor-like applications bleak.
This new discovery proves that indium selenide crystals can be made just a few atoms thin. It has demonstrated substantially superior electronic properties to silicon. Silicon is a commonly used material in today’s electronic components (especially chips).
More importantly, unlike graphene, the energy gap of indium selenide is quite large. This allows the transistor to be easily turned on/off. This is very similar to silicon, making indium selenide an ideal alternative material to silicon. People can use it to create the next generation of ultra-fast electronic devices.
The father of graphene: it is an ideal material between silicon and graphene
Nowadays, scientists like to combine graphene with other excellent materials. Let graphene’s extraordinary properties complement those of other materials. This often results in exciting scientific discoveries that apply to real-world problems in ways we never imagined.
"The father of graphene" Sir Andre Geim said:
"Ultra-thin indium selenide is an ideal material between silicon and graphene. Similar to graphene, indium selenide has a naturally ultra-thin form, making true nanoscale processes possible. And similar to silicon, indium selenide is an excellent semiconductor."
Sir Andre Geim
For the discovery of graphene, Sir Andre Geim won the Nobel Prize in Physics. He is also one of the study's authors. He believes that this discovery of indium selenide will have a huge impact on the future electronics industry.
Indium selenide is the latest achievement of the National Graphene Research Institute
Researchers at the University of Manchester needed to overcome an overarching problem in order to create high-quality indium selenide devices. Because it is too thin, indium selenide is quickly broken down by oxygen and moisture in the air. To avoid this, indium selenide devices must be fabricated in argon. This uses technology developed by the National Graphene Institute at the University of Manchester.
This enabled the world's first high-quality, atomically thick indium selenide film to be produced. Its electron mobility reaches 2,000 cm2/Vs at room temperature, far exceeding that of silicon. At lower temperatures, this indicator will increase exponentially.
In the current experiment, the researchers produced indium selenide with a length and width of several microns, which is about the size of a hair's cross-section. Researchers believe that by combining existing technologies for making large-area graphene, the commercial production of indium selenide is just around the corner.
Professor Vladimir Falko, head of the National Graphene Institute and one of the authors of this paper, said:
"The technology developed by the National Graphene Institute can separate the atomic layers of materials to produce high-quality two-dimensional crystals. This technology provides broad prospects for the development of new materials for optoelectronics. We have been looking for new layered materials for experiments."
Ultra-thin indium selenide is a member of the rapidly growing family of two-dimensional crystals. These two-dimensional crystals, depending on their structure, thickness and chemical composition, have many useful properties. Research on graphene and two-dimensional materials bridges science and engineering. Today, this is the fastest growing field of materials science.
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