Focusing on MicroLED display applications, Porotech and Power Semiconductor reach cooperation

Porotech, a Micro LED company derived from the University of Cambridge in the United Kingdom and a semiconductor technology company based on gallium nitride (GaN), announced that it has cooperated with Power Semiconductor Manufacturing Co., Ltd. to establish a strategic partnership in Micro LED display applications to produce 200mm GaN-on-Silicon Micro LEDs for terminal display applications.

Porotech noted that this partnership will accelerate the production of the highest brightness, highest pixel density, smallest and low-cost Micro LED for terminal display applications, and achieve commercial mass production to address consumer application needs.

Porotech emphasized that the combination of Power Semiconductor's proprietary technology in semiconductor front-end wafer manufacturing foundry and Porotech's world-leading technologies such as PoroGaN® MicroLED-on-Silicon (uLEDoS for short), dynamic pixel adjustment technology (DPT®), and GaN-on-Silicon platform will ensure the commercialization of Micro LED displays.

Porotech believes that the mass production of Porotech Micro LED-on-Silicon in a semiconductor environment is a major step forward in the commercialization of display consumer applications. Power Semiconductor's strength in semiconductor front-end wafer manufacturing is also expected to contribute in the production stage. Both parties are confident in the potential achievements of Micro LED-on-Silicon in semiconductor manufacturing technology and will leverage the technical advantages of both parties to achieve high-performance, high-yield and low-cost terminal display applications.

Porotech founder Zhu Tongtong said that cooperation with Power Semiconductor Manufacturing Co., Ltd. is the best way to produce Micro LED-on for application displays.-Silicon technology, marking a major advancement that fully demonstrates a common attitude in the pursuit of innovation and excellence. In the technological evolution of uLEDoS technology, the role of GaN on Silicon is indispensable. (Source: Science and Technology News)