The patent abstract shows that this application discloses a vertical LED chip structure and a manufacturing method, including a conductive substrate; a back metal layer is provided under the conductive substrate; a bonding metal layer is provided on the conductive substrate; a reflective bonding metal layer is provided on the bonding metal layer; and an ohmic junction is provided on the reflective bonding metal layer. contact metal layer; the ohmic contact metal layer is provided with a passivation insulating layer; the passivation insulating layer is provided with an epitaxial material layer; the epitaxial material layer is provided with an insulating protective layer; the insulating protective layer is provided with metal fingers and pad electrodes. This application utilizes mass transfer technology and advanced packaging technology, using micro LED chips are made into vertical LED chips of traditional sizes, which have low cost, no light shading, high light extraction efficiency, and no damage to the chip during cutting and welding wires. At the same time, vertical LED chips can integrate more functional devices; it solves the technical problems existing in the existing technology, improves production efficiency, meets the production needs of enterprises, and enhances the competitiveness of enterprises.
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