The patent abstract shows that a micro An LED, including: a first type semiconductor layer; a first type capping layer formed on the first type semiconductor layer; and a light emitting layer formed on the first type capping layer; wherein the first type semiconductor layer includes a mesa structure, a trench, and an ion implantation fence separated from the mesa structure; the ion implantation fence is formed around the trench, and the trench is formed around the mesa structure; wherein the resistance of the first ion implantation fence is higher than the resistance of the first mesa structure.
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