Jiangxi Zhaochi Semiconductor applies for patents for high-efficiency Micro-LED epitaxial wafers and their preparation methods, which can improve luminous efficiency.

The patent summary shows that the invention discloses a high-light-efficiency MicroLED epitaxial wafer and its preparation method, MicroLED, and relates to the field of semiconductor optoelectronic devices. The MicroLED epitaxial wafer includes a substrate, a buffer layer, an undoped GaN layer, an N-type GaN layer, a multiple quantum well layer, a hole expansion layer, a hole storage layer and a hole layer in sequence; the hole expansion layer is a periodic structure, each cycle includes a sequentially stacked BN layer and an Mg lightly doped GaN layer; the hole storage layer is a periodic structure, each cycle includes a sequential stacked GaN layer, InGaN layer and Mg-doped layer. AlGaN layer; the hole layer is a periodic structure, each cycle includes a P-type BInGaN layer, a Mg3N2 layer and a P-type GaN layer stacked in sequence; the doping concentration of the P-type GaN layer is ≥1×1019cm3. Implementing the present invention can improve luminous efficiency.