Nanjing University cooperates to develop the world's first RGB full gallium nitride-based chip TFT-based Micro-LED full-color display

Recently, Nanjing University, Xiamen University, Hefei University of Technology, Xiamen Future Display Research Institute and Tianma Microelectronics jointly developed the world's first TFT-based Micro-LED full-color display with RGB full nitride chips. It successfully completed the verification of the new full-color technology solution for the first time, and the results were successfully shortlisted for the top ten developments in China's third-generation semiconductor technology in 2024 after strict selection. The results were officially announced at the 10th International Third-Generation Semiconductor Forum (IFWS 2024) held in Suzhou from November 19th to 21st.

Micro-LED display technology is a new display technology that integrates miniaturized semiconductor light-emitting diodes in a matrix form at high density. It is an interdisciplinary application technology for LED chip and flat-panel display manufacturing. It has significant advantages in brightness, response speed, power consumption, transparency, stability, etc., and is widely considered to be the next generation of mainstream display technology. However, due to the technical bottleneck of high-quality red InGaN quantum well epitaxial growth, the efficiency of gallium nitride-based red Micro-LED chips has been difficult to break through.

The teams of Nanjing University and Hefei University of Technology have been committed to research on the epitaxial growth of high In component red LEDs. By optimizing growth conditions and designing various stress control structures, they have significantly improved the quality of high In component InGaN quantum well materials. They have successfully prepared tunnel junction red Micro-LED devices with an electrical injection efficiency of over 90% through molecular beam epitaxy technology, and have further developedThe phenomenon of performance degradation of the device in high temperature environment and the physical mechanism behind it are explained. This part of the research results, titled "High-temperature performance of InGaN-based amber micro-light-emitting diodes using an epitaxial tunnel junction contact", was published in Applied Physics Letters 124, 142103 (2024) ( https://doi.org/10.1063/5.0190000 ), and was selected as Editor's Pick by the editor-in-chief of APL.

The technical teams of Nanjing University and Xiamen University further cooperated with Tianma Microelectronics Company and innovatively proposed new methods and technologies to improve the efficiency and yield of laser mass transfer. They jointly developed the world's first RGB all-nitride chip TFT-based super-retina display Micro-LED full-color screen with a pixel density of up to 403PPI. This work confirmed the feasibility of all-nitride display technology and provided new full-color technical solutions for the development of new display technologies in the future.